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STP85NF55 데이터시트(PDF) 4 Page - STMicroelectronics |
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STP85NF55 데이터시트(HTML) 4 Page - STMicroelectronics |
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4 / 18 page ![]() Table 6. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD(1) Forward on voltage ISD = 80 A, VGS = 0 V - 1.5 V trr Reverse recovery time ISD = 80 A, di/dt = 100 A/µs, VDD = 25 V, TJ = 150 °C (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 75 ns Qrr Reverse recovery charge - 210 nC IRRM Reverse recovery current - 5.5 A 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% STB85NF55T4, STP85NF55 Electrical characteristics DS2569 - Rev 12 page 4/18 |
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