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HS8MA2 데이터시트(PDF) 2 Page - Rohm

부품명 HS8MA2
상세설명  30V PchNch Power MOSFET
PDF  20 Pages
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제조업체  ROHM [Rohm]
홈페이지  http://www.rohm.com
Logo ROHM - Rohm

HS8MA2 데이터시트(HTML) 2 Page - Rohm

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HS8MA2
　 　 　 　　 　
　 　 　 　 　 　 　 　
Datasheet
l
lThermal resistance
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Thermal resistance, junction - ambient
RthJA*3
-
-
83.3
℃/W
l
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol Type
Conditions
Values
Unit
Min.
Typ.
Max.
Drain - Source breakdown
voltage
V(BR)DSS
Tr1
VGS = 0V, ID = -1mA
-30
-
-
V
Tr2
VGS = 0V, ID = 1mA
30
-
-
Breakdown voltage
temperature coefficient
　ΔV(BR)DSS　 Tr1 ID = -1mA, referenced to 25℃
-
-22
-
mV/℃
　　 ΔTj 　 　 Tr2 ID = 1mA, referenced to 25℃
-
21
-
Zero gate voltage
drain current
IDSS
Tr1
VDS = -30V, VGS = 0V
-
-
-1
μA
Tr2
VDS = 30V, VGS = 0V
-
-
1
Gate - Source
leakage current
IGSS
Tr1
VGS = ±20V, VDS = 0V
-
-
±100
nA
Tr2
VGS = ±20V, VDS = 0V
-
-
±100
Gate threshold
voltage
VGS(th)
Tr1
VDS = -10V, ID = -1mA
-1.0
-
-2.5
V
Tr2
VDS = 10V, ID = 1mA
1.0
-
2.5
Gate threshold voltage
temperature coefficient
　ΔVGS(th) 　 Tr1 ID = -1mA, referenced to 25℃
-
2.9
-
mV/℃
　　 ΔTj 　 　 Tr2 ID = 1mA, referenced to 25℃
-
-3
-
Static drain - source
on - state resistance
RDS(on)*4
Tr1
VGS = -10V, ID = -5.5A
-
55
80
mΩ
VGS = -4.5V, ID = -5.5A
-
80
115
Tr2
VGS = 10V, ID = 7.0A
-
25
35
VGS = 4.5V, ID = 7.0A
-
40
56
Gate resistance
RG
Tr1
f=1MHz, open drain
-
10
-
Ω
Tr2
-
3
-
Forward Transfer
Admittance
|Yfs|*4
Tr1
VDS = -5V, ID = -3A
1.9
-
-
S
Tr2
VDS = 5V, ID = 4.5A
1.4
-
-
*1 Pw ≤ 1s, Limited only by maximum temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Pulsed
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　　 　 　 　 　 　
　
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2/19
20191011 - Rev.001



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