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STU10P6F6 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STU10P6F6
상세설명  P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages
PDF  24 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STU10P6F6 데이터시트(HTML) 5 Page - STMicroelectronics

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STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
Electrical characteristics
24
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
-10
A
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
-40
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = -5 A, VGS = 0 V
-
-1.1
V
trr
Reverse recovery time
ISD = -10 A,
di/dt = -100 A/µs,
VDD = -48 V
(see Figure 17)
-20
ns
Qrr
Reverse recovery charge
-
17.8
nC
IRRM
Reverse recovery current
-
-1.8
A



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