| 전자부품 데이터시트 검색엔진 |
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STD65N55 데이터시트(PDF) 5 Page - STMicroelectronics |
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STD65N55 데이터시트(HTML) 5 Page - STMicroelectronics |
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5 / 11 page ![]() STD65N55 Electrical characteristics 5/11 Table 5. Switching on/off (inductive load) Symbol Parameter Test condictions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD = 27V, ID = 32A, RG = 4.7Ω, VGS = 10V (see Figure 3) 20 50 ns ns td(off) tf Turn-off delay time Fall time VDD = 27V, ID = 32A, RG = 4.7Ω, VGS = 10V (see Figure 3) 35 11.5 ns ns Table 6. Source drain diode Symbol Parameter Test condictions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Source-drain current Source-drain current (pulsed) 65 260 A A VSD Forward on voltage ISD = 65A, VGS = 0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 65A, VDD = 30V di/dt = 100A/µs, Tj = 150°C(see Figure 5) 47 87 3.7 ns nC A |
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