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STI11NM80 데이터시트(PDF) 1 Page - STMicroelectronics |
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STI11NM80 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 22 page ![]() September 2011 Doc ID 9241 Rev 11 1/22 22 STB11NM80, STF11NM80 STI11NM80, STP11NM80, STW11NM80 N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247 Features ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Switching applications Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Figure 1. Internal schematic diagram Order codes VDSS RDS(on) max RDS(on)*Qg ID STB11NM80 800 V < 0.40 Ω 14 Ω*nC 11 A STF11NM80 STI11NM80 STP11NM80 STW11NM80 TO-247 D²PAK TO-220 TO-220FP 1 2 3 1 3 1 2 3 1 2 3 I²PAK 1 2 3 Table 1. Device summary Order codes Marking Package Packaging STB11NM80 B11NM80 D²PAK Tape and reel STF11NM80 F11NM80 TO-220FP Tube STI11NM80 I11NM80 I²PAK STP11NM80 P11NM80 TO-220 STW11NM80 W11NM80 TO-247 www.st.com |
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