STP11NM80 datasheet(3/22 Pages) STMICROELECTRONICS

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STB/F/I/P/W11NM80

Electrical ratings

Doc ID 9241 Rev 11

3/22

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

D²PAK, I²PAK

TO-220, TO-247

TO-220FP

VDS

Drain-source voltage (VGS = 0)

800

VGS

Gate-source voltage

±30

Drain current (continuous) at TC = 25 °C

11 (1)

Limited only by the maximum temperature allowed

Drain current (continuous) at TC=100 °C

8 (1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

44 (1)

PTOT

Total dissipation at TC = 25 °C

150

Derating factor

1.2

0.28

W/°C

VISO

Insulation withstand voltage (DC)

2500

Tstg

Operating junction temperature

Storage temperature

-65 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

D²PAK TO-220FP I²PAK TO-220 TO-247

Rthj-case

Thermal resistance junction-case

max

0.83

3.6

0.83

°C/W

Rthj-a

Thermal resistance junction-

ambient max

62.5

°C/W

Rthj-pcb

(1)

When mounted on 1inch² FR-4 board, 2 oz Cu

Thermal resistance junction-pcb

max

°C/W

Maximum lead temperature for

soldering purpose

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAS

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

2.5

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

400

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