STGWA75H65DFB2 datasheet(2/15 Pages) STMICROELECTRONICS

부품명	STGWA75H65DFB2

상세설명	Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package

PDF	15 Pages

Scroll/Zoom	100%

제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

Logo

2 / 15 page

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0 V)

650

Continuous collector current at TC = 25 °C

115

Continuous collector current at TC = 100 °C

ICP (1)

Pulsed collector current (tp ≤ 1 μs, TJ < 175 °C)

225

VGE

Gate-emitter voltage

±20

Transient gate-emitter voltage (tp ≤ 10 μs)

±30

Continuous forward current at TC = 25 °C

110

Continuous forward current at TC = 100 °C

IFP(1)

Pulsed forward current (tp ≤ 1 μs, TJ < 175 °C)

195

PTOT

Total power dissipation at TC = 25 °C

357

TSTG

Storage temperature range

-55 to 150

°C

Operating junction temperature range

-55 to 175

1. Defined by design, not subject to production test.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case IGBT

0.42

°C/W

Thermal resistance junction-case diode

0.49

RthJA

Thermal resistance junction-ambient

STGWA75H65DFB2

Electrical ratings

DS13215 - Rev 2

page 2/15

STGWA75H65DFB2 데이터시트(PDF) 2 Page - STMicroelectronics

STGWA75H65DFB2 데이터시트(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

데이터시트 다운로드

링크 URL