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STK32N4LLF5 데이터시트(PDF) 1 Page - STMicroelectronics |
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STK32N4LLF5 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() Preliminary Data This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. January 2009 Rev 1 1/12 12 STK32N4LLF5 N-channel 40 V, 0.0017 Ω, 32 A, PolarPAK® STripFET™ V Power MOSFET Features ■ Ultra low top and bottom junction to case thermal resistance ■ Extremely low on-resistance RDS(on) ■ RDS(on)*Qg industry benchmark ■ High avalanche ruggedness ■ Fully encapsulated die ■ 100% Matte tin finish (in compliance with the 2002/95/EC european directive) ■ PolarPAK® is a trademark of VISHAY Application ■ Switching applications Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Figure 1. Internal schematic diagram Type VDSS RDS(on) max RDS(on)*Qg STK32N4LLF5 40 V < 0.0025 Ω 106.4nC*mΩ PolarPAK® Bottom View Top View Table 1. Device summary Order code Marking Package Packaging STK32N4LLF5 324L5 PolarPAK® Tape and reel www.st.com Obsolete Product(s) - Obsolete Product(s) |
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