| 전자부품 데이터시트 검색엔진 |
|
STS5DP3LLH6 데이터시트(PDF) 1 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STS5DP3LLH6 데이터시트(HTML) 1 Page - STMicroelectronics |
|
1 / 14 page ![]() January 2018 DocID025864 Rev 3 1/14 This is information on a product in full production. www.st.com STS5DP3LLH6 Dual P-channel - 30 V, 48 mΩ typ., -5 A, STripFET™ H6 Power MOSFET in an SO-8 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max ID STS10P3LLH6 -30 V 56 mΩ -5 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packing STS5DP3LLH6 5KK3L SO-8 Tape and reel |
유사한 부품 번호 - STS5DP3LLH6 |
|
유사한 설명 - STS5DP3LLH6 |
|
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |