P5NK50 datasheet(2/29 Pages) STMICROELECTRONICS

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Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

I2PAK, DPAK,

TO-220, IPAK

TO-220FP

VDS

Drain-source voltage

500

VGS

Gate-source voltage

±30

Drain current (continuous) at TC = 25 °C

4.4

4.4 (1)

Drain current (continuous) at TC = 100 °C

2.7

2.7 (1)

IDM (2)

Drain current (pulsed)

17.6

17.6 (1)

PTOT

Total dissipation at TC = 25 °C

ESD

Gate-source human body model

(R = 1.5 kΩ, C = 100 pF)

VISO

Insulation withstand voltage (RMS)

from all three leads to external heat-sink

(t = 1 s, TC = 25 °C)

2.5

dv/dt (3)

Peak diode recovery voltage slope

4.5

V/ns

Operating junction temperature range

-55 to 150

°C

Tstg

Storage temperature range

1. Limited by maximum junction temperature.

2. Pulse width limited by safe operating area.

3. ISD ≤ 4.4 A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

I2PAK,

TO-220

TO-220FP

DPAK

IPAK

Rthj-case

Thermal resistance junction-case

1.78

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

100

°C/W

Rthj-pcb (1)

Thermal resistance junction-pcb

°C/W

1. When mounted on an 1-inch² FR-4, 2oz Cu board.

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

4.4

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

130

STB5NK50Z-1,STD5NK50ZT4,STP5NK50Z,STP5NK50ZFP,STU5NK50Z

Electrical ratings

DS2834 - Rev 6

page 2/29

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