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STWA3N170 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 STWA3N170
상세설명  N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH™ Power MOSFETs in TO-247 and TO-247 long leads packages
PDF  14 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STWA3N170 데이터시트(HTML) 3 Page - STMicroelectronics

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STW3N170, STWA3N170
Electrical ratings
DocID028045 Rev 1
3/14
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
1700
V
VGS
Gate-source voltage
±30
V
ID
Drain current (continuous) at Tcase = 25 °C
2.6
A
Drain current (continuous) at Tcase = 100 °C
1.6
IDM(1)
Drain current (pulsed)
10.4
A
PTOT
Total dissipation at Tcase = 25 °C
160
W
IAR
Avalanche current, repetitive or not repetitive
0.8
A
EAS(2)
Single pulse avalanche energy
2
mJ
Tstg
Storage temperature
-55 to 150
°C
Tj
Operating junction temperature
Notes:
(1) Pulse width limited by Tjmax.
(2) starting Tj = 25 °C, ID = IAR, VDD = 50 V.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
0.78
°C/W
Rthj-amb
Thermal resistance junction-ambient
50



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