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T1235T-8G 데이터시트(PDF) 3 Page - STMicroelectronics |
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T1235T-8G 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 10 page ![]() T1235T-8G Characteristics DocID031279 Rev 1 3/10 Table 4: Static characteristics Symbol Test conditions Tj Value Unit VTM(1) IT = 17 A, tp = 380 µs 25 °C Max. 1.6 V VTO(1) Threshold on-state voltage 150 °C Max. 0.85 V RD(1) Dynamic resistance 150 °C Max. 50 mΩ IDRM/IRRM VDRM = VRRM = 800 V 25 °C Max. 5 µA 125°C 1 mA VDRM = VRRM = 600 V 150 °C Max. 3.1 mA Notes: (1)For both polarities of A2 referenced to A1. Table 5: Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) D²PAK Max. 1.6 °C/W |
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