T435T-600FP datasheet(4/9 Pages) STMICROELECTRONICS

4 / 9 page

Characteristics

T435T-600FP

4/9

DocID17632 Rev 3

Figure 5. Relative variation of gate trigger

current, and gate trigger voltage versus

junction temperature

Figure 6. Relative variation of holding current

and latching current versus junction

temperature

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-40 -30 -20 -10

10 20 30 40 50 60 70 80 90 100 110 120 130

GT,VGT[Tj]/ IGT,VGT[Tj=25 °C]

GT Q1-Q2

GT Q3

GT Q1-Q2-Q3

Tj(°C)

typical values

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-40 -30 -20 -10

10 20 30 40 50 60 70 80 90 100 110 120 130

H,IL [Tj]/ IH,IL [Tj=25 °C]

Tj(°C)

typical values

Figure 7. Surge peak on-state current versus

number of cycles

Figure 8. Non-repetitive surge peak on-state

current for a sinusoidal

100

1000

Non repetitive

j initial=25 °C

Repetitive

C=105 °C

One cycle

t=20ms

TSM(A)

Number of cycles

100

1000

0.01

0.10

1.00

10.00

j initial=25 °C

dI/dt limitation: 50 A/µs

TSM

I²t

TSM(A), I²t (A²s)

tP(ms)

pulse t < 10 ms, and corresponding value of I t

Figure 9. On-state characteristics

(maximum values)

Figure 10. Relative variation of critical rate of

decrease of main current (dI/dt)c versus

junction temperature

100

j=25 °C

j=125 °C

j max :

to = 0.9 V

d = 100 mΩ

VTM(V)

TM(A)

100

125

Tj(°C)

(dI/dt)

c [Tj]/ (dI/dt)c [Tj=125 °C]

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