AP4569GD datasheet(5/7 Pages) A-POWER

부품명	AP4569GD

상세설명	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	7 Pages

Scroll/Zoom	100%

제조업체	A-POWER [Advanced Power Electronics Corp.]

홈페이지	http://www.a-power.com.tw

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5 / 7 page

AP4569GD

N-Channel

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Transfer Characteristics

Fig 12. Gate Charge Waveform

5/7

4.5V

QGS

QGD

Charge

0369

Q G , Total Gate Charge (nC)

I D =4 A

V DS =30 V

100

1000

V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

0.01

0.1

100

0.1

100

V DS , Drain-to-Source Voltage (V)

T A =25

o C

Single Pulse

1ms

10ms

100ms

10s

V GS , Gate-to-Source Voltage (V)

T j =150

o C

T j =25

o C

V DS =5V

0.01

0.1

0.0001

0.001

0.01

0.1

100

1000

t , Pulse Width (s)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthja + Ta

Rthja = 90℃

℃

℃/W

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

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