1035MP

35 Watts, 50 Volts

Avionics 1025 - 1150 MHz

GENERAL DESCRIPTION

The 1035 MP is a COMMON BASE bipolar transistor. It is designed for pulsed

systems in the frequency band 1025-1150 MHz. The device has gold thin-film

metallization for proven highest MTTF. The transistor includes input prematch for

broadband capability.

Low thermal resistance package reduces junction

temperature, extends life.

CASE OUTLINE

55FW-1

ABSOLUTE MAXIMUM RATINGS

125 Watts Pk

Maximum Voltage and Current

BVces

Collector to Emitter Voltage

65 Volts

BVebo

Emitter to Base Voltage

3.5 Volts

Ic

Collector Current

2.5 Amps Pk

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

ELECTRICAL CHARACTERISTICS @ 25

°C

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Power Out

F= 1025-1150 MHz

35

W

Power Input

Vcc = 50 Volts

3.5

W

Power Gain

PW = 10

µsec, DF = 1%

10

10.5

dB

ηc

Efficiency

45

%

VSWR

Load Mismatch Tolerance

F = 1090 MHz

10:1

FUNCTIONAL CHARACTERISTICS @ 25

°C

BVebo

Emitter to Base Breakdown

Ie = 5 mA

3.5

V

BVces

Collector to Emitter Breakdown

Ic = 15mA

65

V

Hfe

DC Current Gain

Vce = 5V, Ic = 100 mA

20

Cob

Output Capacitance

Vcb = 50 V, f = 1 MHz

17

20

pF

Thermal Resistance

1.4

Note 1: At rated output power and pulse conditions

2: At rated pulse conditions

Issue December 6, 1995

Advanced Power Technology reserves the right to change, without notice, the specifications and information