APT40GP90B datasheet(1/6 Pages) ADPOW

부품명	APT40GP90B

상세설명	POWER MOS 7 IGBT

PDF	6 Pages

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제조업체	ADPOW [Advanced Power Technology]

홈페이지	http://www.advpowertech.com

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APT40GP90B

TYPICAL PERFORMANCE CURVES

The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.

Using Punch Through Technology this IGBT is ideal for many high frequency,

high voltage switching applications and has been optimized for high frequency

switchmode power supplies.

• Low Conduction Loss

• SSOA Rated

• Low Gate Charge

• Ultrafast Tail Current shutoff

MAXIMUM RATINGS

All Ratings: TC = 25°C unless otherwise specified.

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

STATIC ELECTRICAL CHARACTERISTICS

MIN

TYP

MAX

900

3

4.5

6

3.2

3.9

2.7

250

1000

±100

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250µA)

Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)

Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 25°C)

Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 125°C)

Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 2

Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) 2

Gate-Emitter Leakage Current (VGE = ±20V)

Symbol

BVCES

VGE(TH)

VCE(ON)

ICES

IGES

UNIT

Volts

µA

nA

Symbol

VCES

VGE

VGEM

IC1

IC2

ICM

SSOA

PD

TJ,TSTG

TL

APT40GP90B

900

±20

±30

100

50

160

160A @ 900V

543

-55 to 150

300

UNIT

Volts

Amps

Watts

°C

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Gate-Emitter Voltage Transient

Continuous Collector Current 7 @ TC = 25°C

Continuous Collector Current @ TC = 110°C

Pulsed Collector Current 1 @ TC = 150°C

Switching Safe Operating Area @ TJ = 150°C

Total Power Dissipation

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

TO-247

G

C

E

G

C

E

POWER MOS 7® IGBT

APT40GP90B

900V

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