APTC80AM75SC

APT website – http://www.advancedpower.com

7 – 7

Typical SiC Diode Performance Curve

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.5

0.00001

0.0001

0.001

0.01

0.1

1

Rectangular Pulse Duration (Seconds)

Forward Characteristics

0

10

20

30

40

50

60

0

0.5

1

1.522.533.5

Reverse Characteristics

0

300

600

900

1200

400

600

800 1000 1200 1400 1600

Capacitance vs.Reverse Voltage

0

400

800

1200

1600

2000

2400

1

10

100

1000

“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon

Technologies AG”.

APT reserves the right to change, without notice, the specifications and information contained herein

APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.