| 전자부품 데이터시트 검색엔진 |
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DF2S20CT 데이터시트(PDF) 2 Page - Toshiba Semiconductor |
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DF2S20CT 데이터시트(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page ![]() DF2S20CT 2 4. 4. 4. 4. Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) VRWM: Working peak reverse voltage VBR: Reverse breakdown voltage IBR: Reverse breakdown current IR: Reverse current VC: Clamp voltage IPP: Peak pulse current RDYN: Dynamic resistance Fig. Fig. Fig. Fig. 4.1 4.1 4.1 4.1 Definitions of Electrical Characteristics Definitions of Electrical Characteristics Definitions of Electrical Characteristics Definitions of Electrical Characteristics Characteristics Zener voltage Dynamic impedance Reverse current Total capacitance Symbol VZ ZZ IR Ct Note Test Condition IZ = 5 mA IZ = 5 mA VR = 15 V VR = 0 V, f = 1 MHz Min 18.8 Typ. 9 Max 21.2 55 0.5 Unit V Ω µA pF 5. 5. 5. 5. Guaranteed ESD Protection (Note) Guaranteed ESD Protection (Note) Guaranteed ESD Protection (Note) Guaranteed ESD Protection (Note) Test Condition IEC61000-4-2 (Contact discharge) ESD Protection ±12 kV Note: Criterion: No damage to devices. 2014-04-15 Rev.4.0 |
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