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DF2S20CT 데이터시트(PDF) 2 Page - Toshiba Semiconductor

부품명 DF2S20CT
상세설명  ESD Protection Diodes Silicon Epitaxial Planar
PDF  6 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

DF2S20CT 데이터시트(HTML) 2 Page - Toshiba Semiconductor

  DF2S20CT Datasheet HTML 1Page - Toshiba Semiconductor DF2S20CT Datasheet HTML 2Page - Toshiba Semiconductor DF2S20CT Datasheet HTML 3Page - Toshiba Semiconductor DF2S20CT Datasheet HTML 4Page - Toshiba Semiconductor DF2S20CT Datasheet HTML 5Page - Toshiba Semiconductor DF2S20CT Datasheet HTML 6Page - Toshiba Semiconductor  
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DF2S20CT
2
4.
4.
4.
4. Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25
))))
VRWM: Working peak reverse
voltage
VBR: Reverse breakdown voltage
IBR: Reverse breakdown current
IR: Reverse current
VC: Clamp voltage
IPP: Peak pulse current
RDYN: Dynamic resistance
Fig.
Fig.
Fig.
Fig. 4.1
4.1
4.1
4.1 Definitions of Electrical Characteristics
Definitions of Electrical Characteristics
Definitions of Electrical Characteristics
Definitions of Electrical Characteristics
Characteristics
Zener voltage
Dynamic impedance
Reverse current
Total capacitance
Symbol
VZ
ZZ
IR
Ct
Note
Test Condition
IZ = 5 mA
IZ = 5 mA
VR = 15 V
VR = 0 V, f = 1 MHz
Min
18.8
Typ.
9
Max
21.2
55
0.5
Unit
V
Ω
µA
pF
5.
5.
5.
5. Guaranteed ESD Protection (Note)
Guaranteed ESD Protection (Note)
Guaranteed ESD Protection (Note)
Guaranteed ESD Protection (Note)
Test Condition
IEC61000-4-2 (Contact discharge)
ESD Protection
±12 kV
Note:
Criterion: No damage to devices.
2014-04-15
Rev.4.0



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