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DF3D6.8MS 데이터시트(PDF) 2 Page - Toshiba Semiconductor

부품명 DF3D6.8MS
상세설명  ESD Protection Diodes Silicon Epitaxial Planar
PDF  8 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

DF3D6.8MS 데이터시트(HTML) 2 Page - Toshiba Semiconductor

  DF3D6.8MS Datasheet HTML 1Page - Toshiba Semiconductor DF3D6.8MS Datasheet HTML 2Page - Toshiba Semiconductor DF3D6.8MS Datasheet HTML 3Page - Toshiba Semiconductor DF3D6.8MS Datasheet HTML 4Page - Toshiba Semiconductor DF3D6.8MS Datasheet HTML 5Page - Toshiba Semiconductor DF3D6.8MS Datasheet HTML 6Page - Toshiba Semiconductor DF3D6.8MS Datasheet HTML 7Page - Toshiba Semiconductor DF3D6.8MS Datasheet HTML 8Page - Toshiba Semiconductor  
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DF3D6.8MS
2
4.
4.
4.
4. Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25
))))
VRWM: Working peak reverse
voltage
VBR: Reverse breakdown voltage
IBR: Reverse breakdown current
IR: Reverse current
VC: Clamp voltage
IPP: Peak pulse current
RDYN: Dynamic resistance
IF: Forward current
VF: Forward voltage
Fig.
Fig.
Fig.
Fig. 4.1
4.1
4.1
4.1 Definitions of Electrical Characteristics
Definitions of Electrical Characteristics
Definitions of Electrical Characteristics
Definitions of Electrical Characteristics
Characteristics
Working peak reverse voltage
Reverse breakdown voltage
Reverse current
Clamp voltage
Input/output-to-ground capacitance
Input/output-to-ground capacitance
difference
Total capacitance
Symbol
VRWM
VBR
IR
VC
Ct-GND
∆Ct-GND
Ct
Note
(Note 1)
(Note 2)
(Note 2)
Test Condition
IBR = 5 mA
VRWM = 5 V
IPP = 1 A
VR = 0 V, f = 1 MHz
(Between I/O and GND pins)
VR = 0 V, f = 1 MHz
(Between I/O and GND pins)
VR = 0 V, f = 1 MHz
(Between I/O and I/O pins)
Min
6
Typ.
11
0.5
0.01
0.22
Max
5
0.5
0.9
0.5
Unit
V
V
µA
V
pF
pF
Note 1: Based on IEC61000-4-5 8/20 µs pulse.
Note 2: Guaranteed by design.
5.
5.
5.
5. Guaranteed ESD Protection (Note)
Guaranteed ESD Protection (Note)
Guaranteed ESD Protection (Note)
Guaranteed ESD Protection (Note)
Test Condition
IEC61000-4-2 (Contact discharge)
ESD Protection
± 8 kV
Note:
Criterion: No damage to devices.
2014-10-16
Rev.4.0



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