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MS1263

DESCRIPTION:

DESCRIPTION:

The MS1263 is a NPN silicon RF power transistor designed for

12.5-volt UHF amplifier applications operating to 512 MHz. The

MS1263 has internal impedance matching for broadband

operation and diffused emitter ballast for high load VSWR

tolerance.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

36

V

Collector-Emitter Voltage

16

V

Emitter-Base Voltage

4.0

V

Collector Current

3.4

0

A

Total Power Dissipation

37.5

W

Storage Temperature

-65 to +150

°°C

Junction Temperature

+200

°°C

Thermal Data

Thermal Data

Thermal Resistance Junction-case

4.6

°°C/W

Features

Features

• 512 MHz

• 12.5 VOLTS

• P

• G

• INPUT MATCHED

• COMMON EMITTER CONFIGURATION

RF & MICROWAVE TRANSISTOR

UHF MOBILE APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855