MS1509.PDF 5-28-03

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MS1509

DESCRIPTION:

DESCRIPTION:

The MS1509 is a 28 V gold metallized, Class C epitaxial silicon

NPN planar transistor designed for UHF military and commercial

equipment. The MS1508 is an internally matched, broadband

device optimized for operation within the 100 – 500 MHz fre-

quency range. This device utilizes diffused emitter resistors

to achieve 5:1 VSWR load mismatch capability at rated

operating conditions.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

60

V

Collector-Emitter Voltage

33

V

Collector-Emitter Voltage

60

V

Emitter-Base Voltage

4.0

V

Device Current

15

A

Power Dissipation

260

W

Junction Temperature

+200

°°C

Storage Temperature

-65 to +150

°°C

Thermal Data

Thermal Data

Thermal Resistance Junction-case

0.67

°°C/W

Features

Features

• 500 MHz

• 28 VOLTS

• G

• EFFICIENCY 55%

• GOLD METALLIZATION

• COMMON EMITTER CONFIGURATION

RF & MICROWAVE TRANSISTORS

TV/LINEAR APPLICATIONS