| 전자부품 데이터시트 검색엔진 |
|
MS2223 데이터시트(PDF) 1 Page - Advanced Power Technology |
|
|
|||||||||||||||||||||||||||||
MS2223 데이터시트(HTML) 1 Page - Advanced Power Technology |
|
1 / 3 page ![]() MSC0XXXA.DOC 5-13-99 MS2223 ABSOLUTE ABSOLUTE MAXIMUM MAXIMUM RATINGS RATINGS (Tcase = 25°°C) Symbol Parameter Value Unit VCC Collector-Supply Voltage* 32 V IC Device Current* 8.0 A PDISS Power Dissipation* 200 W TJ Junction Temperature 200 °°C TSTG Storage Temperature - 65 to + 200 °°C Thermal Data Thermal Data RTH(j-c) Junction-Case Thermal Resistance* 0.68 °°C/W * Applies only to rated RF operation. Features · GOLD METALLIZATION · EMITTER SITE BALLASTED · Pout = 70 W MINIMUM · Gp = 6.7 dB · OVERLAY GEOMETRY · METAL/CERAMIC HERMETIC PACKAGE · LOW THERMAL RESISTANCE DESCRIPTION: DESCRIPTION: The MS2223 is a silicon NPN bipolar transistor designed for avionics applications with high duty cycle requirements. Gold metallization and emitter ballasting provides long term reliability under long pulse formats. RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at WWW.ADVANCEDPOWER.COM or contact our factory direct. |
유사한 부품 번호 - MS2223 |
|
유사한 설명 - MS2223 |
|
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |