MS2231

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DESCRIPTION:

The MS2231 is a high-power Class C transistor specifically designed

for L-Band Radar pulsed driver applications.

This device is capable of operation over a wide range of pulse widths,

duty cycles, and termperatures and is capable of withstanding 3:1

output WSWR at rated RF conditions. Low RF thermal resistance and

computerized automatic wire bonding techniques ensure high

reliability and product consistency.

The MS2231 is supplied in the grounded IMPAC

™ hermetic

metal/ceramic package with internal input/output matching structures.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Unit

Power Dissipation*

≤≤ 100°°C)

270

W

Device Current*

13.5

A

Collector-Supply Voltage*

32

V

Junction Temperature (Pulsed RF Operation)

250

°°C

Storage Temperature

– 65 to + 200

°°C

Thermal Data

Junction-Case Thermal Resistance*

0.55

°°C/W

*Applies only to rated RF amplifier operation

Features

Features

• REFRACTORY/GOLD METALLIZATION

• EMITTER SITE BALLASTED

• LOW THERMAL RESISTANCE

• INPUT / OUTPUT MATCHING

• METAL/CERAMIC HERMETIC PACKAGE

• P

• G

RF AND MICROWAVE TRANSISTORS

L-BAND APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855