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MS3011 데이터시트(PDF) 1 Page - Advanced Power Technology |
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MS3011 데이터시트(HTML) 1 Page - Advanced Power Technology |
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1 / 3 page ![]() MS3011 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS DESCRIPTION: DESCRIPTION: The MS3011 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifi- cally designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C) Symbol Parameter Value Unit PDISS Power Dissipation 5.5 W VCE Collector-Emitter Bias Voltage 20 V IC Device Current 500 mA TJ Junction Temperature 200 º C TSTG Storage Temperature -65 to +200 º C Thermal Data Thermal Data RTH(J-C) Thermal Resistance Junction-case 17 °° C/W Features · 2.0 GHz · POUT = 30.0 dBm · GP = 7.0 dB MINIMUM · 15:1 VSWR @ RATED CONDITIONS · GOLD METALIZATION · COMMON EMITTER CONFIGURATION 12-10-2002 |
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