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MS3023

DESCRIPTION:

DESCRIPTION:

The MS3023 is a common base, hermetically sealed silicon NPN

microwave power transistor. This device is designed for Class C

applications in the 1 - 2 GHz frequency range. Gold metalization

and emitter ballasting provide long-term reliability and superior

ruggedness.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25

ABSOLUTE MAXIMUM RATINGS (Tcase = 25

C)

Symbol

Parameter

Value

Unit

Power Dissipation*

21.8

W

Collector-Supply Voltage*

35

V

Device Current*

600

mA

Junction Temperature

200

Storage Temperature

-65 to +200

THERMAL DATA

THERMAL DATA

Thermal Resistance Junction-case

8.0

°°C/W

**Applies only to rated RF amplifier operation

Features

Features

• GOLD METALIZATION

• Pout = 3.0 W MINIMUM

• 2.0 GHz

• Gp = 7.8 dB

• INFINITE VSWR CAPABLE @ RATED CONDITIONS

• HERMETIC PACKAGE

• COMMON BASE CONFIGURATION

RF & MICROWAVE TRANSISTORS

GENERAL PURPOSE AMPLIFIER

APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855