| 전자부품 데이터시트 검색엔진 |
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APTGT100DH170 데이터시트(PDF) 5 Page - Advanced Power Technology |
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APTGT100DH170 데이터시트(HTML) 5 Page - Advanced Power Technology |
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5 / 5 page ![]() APTGT100DH170 APT website – http://www.advancedpower.com 5 - 5 Forward Characteristic of diode TJ=25°C TJ=125°C TJ=125°C 0 25 50 75 100 125 150 175 200 00.5 11.5 22.5 3 VF (V) hard switching ZCS ZVS 0 5 10 15 20 25 30 0 20 40 60 80 100 120 140 IC (A) VCE=900V D=50% RG=4.7 Ω TJ=125°C TC=75°C Operating Frequency vs Collector Current maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Diode APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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