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ASTD 데이터시트(PDF) 1 Page - Advanced Semiconductor |
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ASTD 데이터시트(HTML) 1 Page - Advanced Semiconductor |
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1 / 3 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/3 Specifications are subject to change without notice. ELECTRICAL CHARACTERISTICS T C = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS IP ASTD 1020 100 200 µµµµA ASTD 2030 200 300 ASTD 3040 300 400 ASTD 4050 400 500 ASTD 5060 500 600 VF IF = 3 mA ASTD 1020 135 mV ASTD 2030 130 ASTD 3040 125 ASTD 4050 120 ASTD 5060 110 VR IR = 500 µA 400 mV PLANAR TUNNEL (BACK) DIODE ASTD SERIES DESCRIPTION: The ASTD Series of Tunnel Diodes are Optimized for Operation as Back Diode Detectors in Applications up to 18 GHz. FEATURES INCLUDE: • Excellent Temperature Stability • Fast Rise / Fall Times • Available in Die Form MAXIMUM RATINGS IR 10 mA PDISS 3 ERG spike PDISS 50 mW @ TA = +60 OC TJ -65 to +110 OC TSTG -65 to +125 OC PACKAGE STYLE 51 |
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