6.6 Electrical Characteristics

over TA = 25°C (unless otherwise noted)(1)

PARAMETER

TEST CONDITIONS

DEVICE

MIN

TYP

MAX

UNIT

VRWM

Reverse stand-off voltage

ESD2CANFD24

–24

24

V

VBRF

Breakdown voltage(2)

IIO = 10 mA, IO to GND

ESD2CANFD24

25.5

35.5

V

VBRR

Breakdown voltage(2)

IIO = –10 mA, IO to GND

ESD2CANFD24

–35.5

–25.5

V

VCLAMP Clamping voltage(3)

IPP = 3.5 A, tp = 8/20 µs, IO to GND

ESD2CANFD24

37

V

VCLAMP Clamping voltage(4)

IPP = 16 A, TLP, IO to GND or GND to IO

ESD2CANFD24

36

V

ILEAK

Leakage current

VIO = ±24 V, IO to GND

ESD2CANFD24

-50

5

50

nA

RDYN

Dynamic resistance(4)

IO to GND or GND to IO

ESD2CANFD24

0.45

Ω

CL

Line capacitance(5)

VIO = 0 V, f = 1 MHz, Vpp = 30 mV

ESD2CANFD24

2.5

4.2

pF

VHold

Holding voltage after

snapback

TLP

ESD2CANFD24

30

V

(1)

Measurements made on each IO channel

(2)

VBRF and VBRR are defined as the voltage when ±10 mA is applied in the positive and negative going direction respectively, before the

device latches into the snapback state

(3)

Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5

(4)

Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008

(5)

Measured from IO to GND on each channel

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ESD2CANFD24

SLVSH12 – NOVEMBER 2022

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