AMT8210

Rev 1.1

2

ELECTRICAL CHARACTERISTICS

Table 1: Absolute Maximum Ratings

PARAMETER

MIN

MAX

UNIT

Supply Voltage

-0.5

+3.8

V

Optical Input Power

-

+ 3

dBm

Storage Temperature

- 40

+ 125

oC

Stresses in excess of the absolute ratings may cause permanent damage. Functional

operation is not implied under these conditions. Exposure to absolute ratings for extended

periods of time may adversely affect reliability.

Table 2: Electrical Specifications

PARAMETER

MIN

TYP

MAX

UNIT

Wavelength

1250

-

1620

nm

Detector Active Area

-

75

-

um

Sensitivity

(1)

-25.0

-27

-

dB

Overload

0

-

dBm

Responsivity 1550nm

-

0.95

-

A/W

Responsivity 1310nm

-

0.85

-

A/W

Small signal transimpedance gain (50

Ω)

-

9.1

-

K

Ω

Small signal 3dB bandwidth

800

1000

-

MHz

Output resistance

50

Ω

Output voltage swing (differential)

500

TIA supply voltage

2.97

3.3

3.6

V

TIA supply current

-

21

mA

Power consumption

-

70

mW

Operating temperature

-40

+25

+85

oC

(1) 1.25Gb/s PRBS 2

Figure 2: Pin location (4-pin)

OUTQ

OUT

VCC

GND

(Bottom View)

Figure 3: Pin location (5-pin)

VCC

OUTQ

GND

OUT

VPD

(Bottom View)

Table 3: Pin description

NAME

DESCRIPTION

OUT

TIA Output (Non-Inverted)

VCC

Supply Voltage (+3.3V)

OUTQ

TIA Output (Inverted)

GND

Ground