PD500

500

μm InGaAs Photodiode

FEATURES

•

Planar Structure

•

Dielectric Passivation

•

High Shunt Resistance

•

High Responsivity

APPLICATIONS

•

High Sensitivity Instrumentation

•

Laser Back Facet Monitoring

PD500-0xx

Ceramic Sub-Mount

PD500-1xx

TO can Package

PRODUCT DESCRIPTION

The PD500 is an InGaAs photodiode with a

photosensitive region 500

μm in diameter. It is

intended

for

use

in

high

sensitivity

instrumentation, laser back-facet monitoring

and low bit rate communication systems.

Planar semiconductor design and dielectric

passivation provide superior noise performance.

The device can be assembled on a ceramic sub-

mount or in an hermetic TO46 can. Custom

packages are an option.

ELECTRICAL CHARACTERISTICS

Table 1: Electrical Specifications

PARAMETER

MIN

TYP

MAX

UNIT

(1)

-

25

-

nA

Capacitance

(2)

-

20

-

pF

Responsivity at 1310nm

0.80

0.90

-

A/W

Responsivity at 1550nm

0.85

0.95

-

A/W

Rise/Fall time

-

3

-

ns

Shunt Resistance (Class A)

(2)

50

-

-

MΩ

(1) 5V reverse bias

(2) 0V reverse bias