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APM2030ND 데이터시트(PDF) 2 Page - Anpec Electronics Coropration

부품명 APM2030ND
상세설명  N-Channel Enhancement Mode MOSFET
PDF  11 Pages
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제조업체  ANPEC [Anpec Electronics Coropration]
홈페이지  http://www.anpec.com.tw
Logo ANPEC - Anpec Electronics Coropration

APM2030ND 데이터시트(HTML) 2 Page - Anpec Electronics Coropration

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Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw
2
APM2030ND
Symbol
Parameter
Rating
Unit
VDSS
Drain-Source Voltage
20
VGSS
Gate-Source Voltage
±12
V
ID*
Continuous Drain Current
6
IDM*
Pulsed Drain Current
VGS=4.5V
24
A
IS*
Diode Continuous Forward Current
2.3
A
TJ
Maximum Junction Temperature
150
TSTG
Storage Temperature Range
-55 to 150
°C
TA=25°C
1.47
PD*
Power Dissipation for Single Operation
TA=100°C
0.58
W
RθJA*
Thermal Resistance-Junction to Ambient
85
°C/W
Note:
*Surface Mounted on 1in
2 pad area, t ≤ 10sec.
APM2030ND
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, IDS=250
µA
20
V
VDS=18V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
TJ=85°C
30
µA
VGS(th)
Gate Threshold Voltage
VDS=VGS, IDS=250
µA
0.5
0.7
1
V
IGSS
Gate Leakage Current
VGS=±12V, VDS=0V
±100
nA
VGS=4.5V, IDS=6A
28
32
RDS(ON)
a
Drain-Source On-state Resistance
VGS=2.5V, IDS=2A
38
45
m
Ω
VSD
a
Diode Forward Voltage
ISD=1.5A, VGS=0V
0.7
1.3
V
Gate Charge Characteristics
b
Qg
Total Gate Charge
9
11
Qgs
Gate-Source Charge
3.6
Qgd
Gate-Drain Charge
VDS=10V, VGS=4.5V,
IDS=6A
1
nC
Electrical Characteristics (T
A = 25°C unless otherwise noted)
Absolute Maximum Ratings (T
A = 25°C unless otherwise noted)



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