55

VTP Process Photodiodes

VTP4085, 4085S

PRODUCT DESCRIPTION

Large area planar silicon mounted on a two lead

ceramic substrate and coated with a layer of

clear epoxy. Low junction capacitance permits

fast response time.

CASE 13 CERAMIC

ABSOLUTE MAXIMUM RATINGS

Storage Temperature:

-20°C to 75°C

Operating Temperature:

-20°C to 75°C

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

VTP4085

VTP4085S

UNITS

Min.

Typ.

Max.

Min.

Typ.

Max.

Short Circuit Current

H = 100 fc, 2850

200

200

µA

2850 K

.20

.20

%/°C

Short Circuit Current

11.4

15

11.4

15

µA

Open Circuit Voltage

H = 100 fc, 2850 K

.33

.33

mV

2850 K

-2.0

-2.0

mV/°C

Dark Current

H = 0, VR = 100 V

100

15

50

nA

Shunt Resistance

H = 0, V = 10 mV

2.0

4.0

M

Ω

H = 0, V = 10 mV

-11

-11

%/°C

Junction Capacitance

H = 0, V = 0 V

.35

.35

nF

λ

range

Spectral Application Range

400

1100

400

1100

nm

λ

p

Spectral Response - Peak

925

925

nm

Sensitivity

@ Peak

.55

.55

A/W

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA

Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto