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TTC008 데이터시트(PDF) 2 Page - Toshiba Semiconductor

부품명 TTC008
상세설명  Bipolar Transistors Silicon NPN Triple-Diffused Type
PDF  7 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TTC008 데이터시트(HTML) 2 Page - Toshiba Semiconductor

  TTC008 Datasheet HTML 1Page - Toshiba Semiconductor TTC008 Datasheet HTML 2Page - Toshiba Semiconductor TTC008 Datasheet HTML 3Page - Toshiba Semiconductor TTC008 Datasheet HTML 4Page - Toshiba Semiconductor TTC008 Datasheet HTML 5Page - Toshiba Semiconductor TTC008 Datasheet HTML 6Page - Toshiba Semiconductor TTC008 Datasheet HTML 7Page - Toshiba Semiconductor  
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TTC008
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (Taaaa = 25
= 25
= 25
= 25 
 unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (pulsed)
Base current
Collector power dissipation
Junction temperature
Storage temperature
(Note 1)
(Note 1)
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
600
600
285
7
1.5
3
0.75
1.1
150
-55 to 150
Unit
V
A
W
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the junction temperature does not exceed 150 .
2014-04-03
Rev.2.0



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