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TTC013 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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TTC013 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
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1 / 7 page ![]() TTC013 1 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC013 TTC013 TTC013 TTC013 Start of commercial production 2010-09 1. 1. 1. 1. Applications Applications Applications Applications • High-Voltage Switching • LCD Backlighting 2. 2. 2. 2. Features Features Features Features (1) High collector breakdown voltage: VCEO = 350 V (2) High DC current gain: hFE = 100 to 200 (IC = 50 mA) 3. 3. 3. 3. Packaging and Internal Circuit Packaging and Internal Circuit Packaging and Internal Circuit Packaging and Internal Circuit PW-Mini 1. Base 2. Collector (Heatsink) 3. Emitter 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T Absolute Maximum Ratings (Note) (Unless otherwise specified, T Absolute Maximum Ratings (Note) (Unless otherwise specified, T Absolute Maximum Ratings (Note) (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (pulsed) Base current Collector power dissipation Collector power dissipation Junction temperature Storage temperature DC (t = 10 s) . (Note 1) (Note 1) (Note 2) (Note 2) Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 600 350 7 0.5 1 0.25 1 2.5 150 -55 to 150 Unit V A W Note 1: Ensure that the junction temperature does not exceed 150. Note 2: Device mounted on a 25.4 mm x 25.4 mm x 1.6 mm FR-4 glass epoxy board (with a dissipating copper surface of 645 mm2) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2015-08-04 Rev.3.0 ©2015 Toshiba Corporation |
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