| 전자부품 데이터시트 검색엔진 |
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1N5817 데이터시트(PDF) 6 Page - NXP Semiconductors |
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1N5817 데이터시트(HTML) 6 Page - NXP Semiconductors |
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6 / 9 page ![]() 1996 May 03 6 Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 Fig.4 1N5818. Maximum values steady state forward power dissipation as a function of the average forward current; a = IF(RMS)/IF(AV). 2 1 0 0 0.5 1.5 MBE641 1 (W) 0.5 PF(AV) IF(AV) (A) a = 3 2.5 1.57 1.42 1 2 Fig.5 1N5819. Maximum values steady state forward power dissipation as a function of the average forward current; a = IF(RMS)/IF(AV). 2 1 0 0 0.5 1.5 MBE643 1 (W) 0.5 PF(AV) IF(AV) (A) a = 3 2.5 1.57 1.42 1 2 |
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