MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

180

V

Collector-Emitter Voltage

VCEO

160

V

Emitter-Base Voltage

VEBO

6.0

V

Collector Current

IC

600

mA

Power Dissipation

PD

2.0

W

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

62.5

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ICBO

VCB=120V

50

nA

ICBO

VCB=120V, TA=100ºC

50

µA

IEBO

VBE=4.0V

50

nA

BVCBO

IC=100µA

180

V

BVCEO

IC=1.0mA

160

V

BVEBO

IE=10µA

6.0

V

VCE(SAT)

IC=10mA, IB=1.0mA

0.15

V

VCE(SAT)

IC=50mA, IB=5.0mA

0.20

V

VBE(SAT)

IC=10mA, IB=1.0mA

1.00

V

VBE(SAT)

IC=50mA, IB=5.0mA

1.00

V

hFE

VCE=5.0V, IC=1.0mA

80

hFE

VCE=5.0V, IC=10mA

80

250

hFE

VCE=5.0V, IC=50mA

30

fT

VCE=10V, IC=10mA, f=100MHz

100

300

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

6.0

pF

Cib

VEB=0.5V, IC=0, f=1.0MHz

20

pF

hfe

VCE=10V, IC=1.0mA, f=1.0kHz

50

200

NF

VCE=5.0V, IC=200µA, RS=10Ω

f=10Hz to 15.7kHz

8.0

dB

CYT5551D

SURFACE MOUNT

DUAL, ISOLATED NPN

SILICON TRANSISTORS

SOT-228 CASE

Central

Semiconductor Corp.

TM

R1 (11-August 2005)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CYT5551D

type consists of two (2) isolated NPN silicon

transistors packaged in an epoxy molded SOT-228

surface mount case. Manufactured by the epitaxial

planar process, this SUPERmini™ device is ideal

for high voltage amplifier applications.

MARKING CODE: FULL PART NUMBER