CP223-2N3866

NPN - RF Transistor Die

0.4 Amp, 30 Volt

Die Size

21.7 x 21.7 MILS

Die Thickness

9.0 MILS

Base Bonding Pad Size

3.2 MILS DIAMETER

Emitter Bonding Pad Size

3.4 x 3.4 MILS

Top Side Metalization

Al – 30,000Å

Back Side Metalization

Au – 12,000Å

Scribe Alley Width

2.7 MILS

Wafer Diameter

4 INCHES

Gross Die Per Wafer

16,000

The CP223-2N3866 is a silicon NPN RF transistor designed for high frequency amplifier and

oscillator applications.

MECHANICAL SPECIFICATIONS:

BACKSIDE COLLECTOR

R0

B

E

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

55

V

Collector-Emitter Voltage

VCEO

30

V

Emitter-Base Voltage

VEBO

3.5

V

Continuous Collector Current

IC

0.4

A

Continuous Base Current

IB

2.0

A

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICEO

VCE=28V

20

μA

ICEV

VCE=55V, VBE(OFF)=1.5V

0.1

mA

IEBO

VEB=3.5V

0.1

mA

BVCER

IC=5.0mA, RBE=10Ω

55

V

BVCBO

IC=500μA

55

V

BVCEO

IC=5.0mA

30

V

BVEBO

IE=100μA

3.5

V

VCE(SAT)

IC=100mA, IB=20mA

1.0

V

hFE

VCE=5.0V, IC=50mA

10

200

hFE

VCE=5.0V, IC=360mA

5.0

fT

VCE=15V, IC=50mA, f=200MHz

500

MHz

Cob

VCB=28V, IE=0, f=1.0MHz

3.0

pF

Gpe

VCC=28V, Pout=1.0W, f=400MHz (Figure 1)

10

dB

η

VCC=28V, Pout=1.0W, f=400MHz (Figure 1)

45

%

R0 (22-February 2017)

www.centra lsemi.

com