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PAM2310 데이터시트(PDF) 3 Page - Diodes Incorporated

부품명 PAM2310
상세설명  2A LOW NOISE STEP-DOWN DC-DC CONVERTER
PDF  11 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

PAM2310 데이터시트(HTML) 3 Page - Diodes Incorporated

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PAM2310
Document number: DS36397 Rev. 3 - 2
3 of 11
www.diodes.com
April 2020
© Diodes Incorporated
PAM2310
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may
affect device reliability. All voltages are with respect to ground.
Parameter
Rating
Unit
Input Voltage VIN
6
V
SW Pin Voltage
-0.3 to (VIN +0.3)
V
FB Pin Voltage
-0.3 to (VIN +0.3)
V
EN Pin Voltage
-0.3 to 6.0
V
Maximum Junction Temperature
+150
°C
Storage Temperature Range
-65 to +150
°C
Soldering Temperature
+300, 5s
°C
Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.)
Parameter
Rating
Unit
Supply Voltage
2.7 to 5.5
V
Junction Temperature Range
-40 to +125
°C
Ambient Temperature Range
-40 to +85
Thermal Information
Symbol
Parameter
Package
Max
Unit
θJA
Thermal Resistance (Junction to Ambient)
SO-8
90
°C/W
θJC
Thermal Resistance (Junction to Case)
SO-8
11
PD
Internal Power Dissipation (@ TA = +25°C)
SO-8
1100
mW
Electrical Characteristics (@TA = +25°C, VIN = 5.0V, VO = 1.8V, CIN = 22µF, CO = 22µF, L = 2.2µH, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
VIN
Input Voltage Range
—
2.7
—
5.5
V
VO
Output Voltage Range
—
0.6
—
VIN
V
VO
Regulated Output Voltage Accuracy
IO = 0 to 2A, VIN = 2.7 to 5.5V
-2
—
+2
%
VFB
Regulated Feedback Voltage
—
0.588
0.600
0.612
V
IFB
FB Leakage Current
VO =1V
—
—
0.2
µA
LNR
Output Voltage Line Regulation
VIN = 2.7V to 5V
—
0.2
—
%/V
LDR
Output Voltage Load Regulation
IO = 0A to 2A
—
0.5
—
%/A
IQ
Quiescent Current
No Load
—
42
90
µA
ISD
Shutdown Current
VEN = 0V
—
—
1
µA
ILIM
Peak Inductor Current
—
3
—
—
A
fOSC
Oscillator Frequency
—
—
1.5
1.8
MHz
RDS(ON)
Drain-Source On-State Resistance
ISW = 100mA
High Side
—
90
—
Ω
Low Side
—
70
—
Ω
tS
Start-Up Time
From Enable to Output Regulation
—
0.5
3
ms
VEH
EN Threshold High
—
1.5
—
—
V
VEL
EN Threshold Low
—
—
—
0.3
V
IEN
EN Leakage Current
VIN = VEN = 0V
-1.0
—
+1.0
µA
OTP
Over Temperature Protection
—
—
+150
—
°C
OTH
OTP Hysteresis
—
—
+30
—
°C



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