C13003 datasheet(1/4 Pages) CDIL

부품명	C13003

상세설명	NPN SILICON POWER TRANSISTOR

PDF	4 Pages

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제조업체	CDIL [Continental Device India Limited]

홈페이지	http://www.cdilsemi.com

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NPN SILICON POWER TRANSISTOR

C13003

TO126

Plastic Package

Applications

Suitable for Lighting, Switching Regulator and Motor Control

ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

600

V

Collector -Emitter ( sus) Voltage

VCEO

400

V

Emitter -Base Voltage

VEBO

9.0

V

Collector Current Continuous

IC

1.5

A

Peak (1)

ICM

3.0

A

Base Current Continuous

IB

0.75

A

Peak (1)

IBM

1.5

A

Emitter Current Continuous

IE

2.25

A

Peak (1)

IEM

4.5

A

Power Dissipation @ Ta=25

oC

PD

1.4

W

Derate Above 25ºC

11.2

mW/ºC

Power Dissipation @ Tc=25ºC

PD

40

W

Derate Above 25ºC

320

mW/ºC

Operating And Storage Junction

Tj, Tstg

-65 to +150

ºC

Temperature Range

THERMAL RESISTANCE

Junction to Case

Rth (j-c)

3.12

ºC/W

Junction to Ambient

Rth (j-a)

89

ºC/W

Maximum Lead Temperature for Soldering

TL

275

ºC

Purposes: 1/8" from Case for 5 Seconds.

(1) Pulse Test: Pulse Width= 5ms Duty Cycle =10%

ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNIT

Collector -Base Voltage

VCBO

IC=1mA, IE=0

600

-

V

Collector -Emitter ( sus) Voltage

VCEO(sus)*IC=10mA, IB=0

400

-

V

Collector-Cuttoff Current

ICBO

VCB=600V, IE=0

-

1.0

mA

VCB=600V, IE=0,TC=100ºC

-

5.0

mA

Emitter-Cuttoff Current

IEBO

VEB=9V, IC=0

-

1.0

mA

Continental Device India Limited

Data Sheet

Page 1 of 4

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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