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CMBT5401 데이터시트(PDF) 1 Page - Continental Device India Limited |
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CMBT5401 데이터시트(HTML) 1 Page - Continental Device India Limited |
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1 / 3 page ![]() Continental Device India Limited Data Sheet Page 1 of 3 SILICON P–N–P HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5401 = 2L ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) –VCBO max. 160 V Collector–emitter voltage (open base) –VCEO max. 150 V Collector current –I C max. 500 mA Total power dissipation up to Tamb = 25°C Ptot max 250 mW Collector–emitter saturation voltage IC = 50 mA; IB = 5 mA VCEsat max. 0,5 V D.C. current gain IC = 10 mA; VCE = –5 V hFE 60 to 240 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) –VCBO max. 160 V Collector–emitter voltage (open base) –VCEO max. 150 V Emitter–base voltage (open collector) –VEBO max. 5 V Collector current –I C max. 500 mA CMBT5401 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2 1 SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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