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TPD4204F 데이터시트(PDF) 9 Page - Toshiba Semiconductor

부품명 TPD4204F
상세설명  TOSHIBA Intelligent Power Device High Voltage 3-phase motor driver IC
PDF  15 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPD4204F 데이터시트(HTML) 9 Page - Toshiba Semiconductor

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TPD4204F
2018-04-09
9
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Operating power supply voltage
VBB
―
50
280
450
V
VCC
―
13.5
15
16.5
Current dissipation
IBB
VBB = 450 V
―
―
0.5
mA
ICC
VCC = 15 V
―
0.8
5
Bootstrap Current dissipation
IBS (ON)
VBS = 15 V, high side ON
―
220
410
μA
IBS (OFF)
VBS = 15 V, high side OFF
―
190
370
Input voltage
VIH
VIN = “H”, VCC = 15 V
2.5
―
―
V
VIL
VIN = “L” , VCC = 15 V
―
―
1.5
Input current
IIH
VIN = 5 V
―
―
150
μA
IIL
VIN = 0 V
―
―
100
SD Input voltage
VSD
VCC = 15 V
―
2.5
―
V
SD Input current
ISDH
VIN = 5 V
―
―
100
μA
ISDL
VIN = 0 V
―
―
150
MOSFET Leakage Current
IDSS
VBB = 600 V
―
―
100
μA
MOSFET On State Resistance
RDSONH
VCC = 15 V, IC = 1.25 A, high side
2.6
3.2
Ω
RDSONL
VCC = 15 V, IC = 1.25 A, low side
2.6
3.2
Diode forward voltage (MOSFET)
VFH
IF = 1.25 A, high side
1.1
1.5
V
VFL
IF = 1.25 A, low side
1.1
1.5
BSD forward voltage
VF (BSD)
IF = 500 µA
0.9
1.2
V
Regulator voltage
VREG
VCC = 15 V, IREG = 30 mA
6.5
7
7.5
V
Current limiting voltage
VR
―
0.46
0.5
0.54
V
Current limiting delay time
Dt
―
1.5
3.8
5
μs
Thermal shutdown temperature
TSD
VCC = 15 V
135
―
185
°C
Thermal shutdown hysteresis
∆
TSD
VCC = 15 V
―
50
―
°C
VCC under voltage protection
VCCUVD
―
10
11
12
V
VCC under voltage protection recovery
VCCUVR
―
10.5
11.5
12.5
V
VBS under voltage protection
VBSUVD
―
9
10
11
V
VBS under voltage protection recovery
VBSUVR
―
9.5
10.5
11.5
V
DIAG saturation voltage
VDIAGsat
IDIAG = 5 mA
―
―
0.5
V
Output on delay time
ton
VBB = 280 V, VCC = 15 V, IC = 1.25 A
―
0.6
1.8
μs
Output off delay time
toff
VBB = 280 V, VCC = 15 V, IC = 1.25 A
―
0.4
2.4
μs
Dead time
tdead
VBB = 280 V, VCC = 15 V, IC = 1.25 A
1.4
―
―
μs
Diode reverse recovery time (MOSFET)
trr
VBB = 280 V, VCC = 15 V, IC = 1.25 A
―
100
―
ns



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