CSD545G datasheet(1/3 Pages) CDIL

부품명	CSD545G

상세설명	NPN SILICON EPITAXIAL TRANSISTOR

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제조업체	CDIL [Continental Device India Limited]

홈페이지	http://www.cdilsemi.com

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NPN SILICON EPITAXIAL TRANSISTOR

CSD545

TO-92

Plastic Package

Low Frequencty Power Amplifier And Convertor Stage Applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector Emitter Voltage

BVCEO

25

V

Collector Base Voltage

BVCBO

25

V

Emitter Base Voltage

BVEBO

5V

Collector Current Continuous

IC

1A

Peak

ICM

1.5

A

Colector Power Dissipation

PD

600

mW

Operating And Storage Junction

Tj, Tstg

ºC

Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Emitter Breakdown Voltage

BVCEO IC=1mA,IB=0

25

V

Collector Base Breakdown Voltage

BVCBO IC=10µA,IB=0

25

V

Emitter Base Breakdown Voltage

BVEBO IE=10µA, IC=0

5V

Collector Cut off Current

ICBO

VCB=20V, IE = 0

1.0

µA

Emitter Cut off Current

IEBO

VBE=4V, IE = 0

1.0

µA

DC Current Gain

hFE (1)

VCE=2V,IC=50mA

60

560

hFE (2) *VCE=2V,IC=1A

30

Base Emitter Saturation Voltage

VBE(sat)* IC=500mA,IB=50mA

0.85

1.2

V

Collector Emitter Saturation

VCE(sat)* IC=500mA,IB=50mA

0.1

0.3

V

Voltage

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNIT

DYNAMIC CHARACTERISTICS

Transition Frequency

fT

IC=50mA, VCE=10V

180

MHz

Collector Output Capacitance

Cob

IE=0, VCB=10V

15

pF

f=1MHz

CLASSIFICATION

D

E

F

G

hFE (1)

60-120

100-200

160-320

280-560

*Pulse Condition: Width < 300

µs, Duty Cycle < 2%.

-55 to +150

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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