©2012 Silicon Storage Technology, Inc.

DS25023B

06/13

Data Sheet

www.microchip.com

1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

SST39LF010 / SST39LF020 / SST39LF040

SST39VF010 / SST39VF020 / SST39VF040

Features

• Organized as 128K x8 / 256K x8 / 512K x8

• Single Voltage Read and Write Operations

– 3.0-3.6V for SST39LF010/020/040

– 2.7-3.6V for SST39VF010/020/040

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption

(typical values at 14 MHz)

– Active Current: 5 mA (typical)

– Standby Current: 1 µA (typical)

• Sector-Erase Capability

– Uniform 4 KByte sectors

• Fast Read Access Time:

– 55 ns for SST39LF010/020/040

– 70 ns for SST39VF010/020/040

• Latched Address and Data

• Fast Erase and Byte-Program:

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

2 seconds (typical) for SST39LF/VF010

4 seconds (typical) for SST39LF/VF020

8 seconds (typical) for SST39LF/VF040

• Automatic Write Timing

– Internal VPP Generation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• CMOS I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

• All devices are RoHS compliant

The SST39LF010, SST39LF020, SST39LF040 and SST39VF010, SST39VF020,

SST39VF040 are 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash

(MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash

technology. The split-gate cell design and thick-oxide tunneling injector attain bet-

ter reliability and manufacturability compared with alternate approaches. The

SST39LF010/020/040 devices write (Program or Erase) with a 3.0-3.6V power

supply. The SST39VF010/020/040 devices write with a 2.7-3.6V power supply.

The devices conform to JEDEC standard pinouts for x8 memories.