FES8HT datasheet(2/2 Pages) EIC

2 / 2 page

RATING AND CHARACTERISTIC CURVES ( FES8AT ~ FES8JT )

FIG.1 - FORWARD CURRENT

FIG.2 - MAXIMUM NON-REPETITIVE

DERATING CURRENT

PEAK FORWARD SURGE CURRENT

100

125

150

175

100

TEMPERATURE, (

°C)

NUMBER OF CYCLES AT 60Hz

FIG.3 - TYPICAL INSTANTANEOUS

FIG. 4 - TYPICAL REVERSE CHARACTERISTICS

FORWARD CHARACTERISTICS

FIG. 5 – TYPICAL JUNCTION CAPACITANCE

Page 2 of 2

Rev. 02 : March 31, 2005

125

150

100

0.1

100

140

120

PERCENT OF RATED PEAK REVERSE

VOLTAGE, (%)

TJ = 25 °C

TJ = 100 °C

Pulse Width = 300

µs

1% Duty Cycle

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

INSTANTANEOUS FORWARD

VOLTAGE, VOLTS

0.1

8.3ms SINGLE HALF SINE-WAVE

(JEDEC) Method

Resistive or Inductive Load

TJ =TJ max.

0.01

REVERSE VOLTAGE, VOLTS

0.1

100

1000

Heatsink, Case Temperature, Tc

Free Air, Ambient Temperature, Ta

FES8HT - FES8JT

FES8AT - FES8DT

FES8FT - FES8GT

TJ = 25 °C

TJ = 25°C

f = 1.0 MHz

Vsig = 50 mVp-p

FES8HT 데이터시트(PDF) 2 Page - EIC discrete Semiconductors

FES8HT 데이터시트(HTML) 2 Page - EIC discrete Semiconductors

Html Pages

1 2

데이터시트 다운로드

링크 URL