LL5711 and LL6263

SCHOTTKY BARRIER DIODES

FEATURES :

• For general purpose applications

• Metal-on-silicon Schottky barrier device which is protected

by a PN junction guard ring. The low forward voltage

drop and fast switching make it ideal for protection of

MOS devices, steering, biasing and coupling diodes for

fast switching and low logic level applications.

• This diode is also available in the DO-35 case with

type designation 1N5711 and 1N6263.

• Pb / RoHS Free

MECHANICAL DATA :

Case: MiniMELF Glass Case (SOD-80C)

Weight: approx. 0.05g

Symbol

Value

Unit

LL5711

70

LL6263

60

Power Dissipation (Infinite Heatsink)

400

(1)

mW

Maximum Single Cycle Surge 10

µs Square Wave

2.0

A

Junction Temperature

125

(1)

°C

Storage temperature range

-55 to + 150

(1)

°C

Parameter

Symbol

Min

Typ

Max

Unit

LL5711

70

-

-

LL6263

60

-

-

Reverse Current

-

-

200

nA

-

-

0.41

-

-

1.0

LL5711

-

-

2.0

LL6263

-

-

2.2

Note: (1) Valid provided that electrodes are kept at ambient temperature

Page 1 of 2

Rev. 02 : March 24, 2005

Parameter

Repetitive Peak Reverse Voltage

V

Reverse Breakdown Voltage

Forward Voltage Drop

V

V

Test Condition

-

-

Diode Capacitance

Reverse Recovery Time

Cd

Trr

pF

ns

1.0

Dimensions in inches and ( millimeters )

0.142(3.6)

0.134(3.4)

0.055 (1.40)

0.019(0.48)

0.011(0.28)

Cathode Mark

MiniMELF (SOD-80C)

Mounting Pad Layout

0.049 (1.25)Min.

0.197 (5.00)

REF

0.098 (2.50)

Max.

0.079 (2.00)Min.