CP560-MPSA92

PNP - High Voltage Transistor Die

Die Size

26 x 26 MILS

Die Thickness

8.0 MILS

Base Bonding Pad Size

4.1 x 4.1 MILS

Emitter Bonding Pad Size

4.1 x 4.1 MILS

Top Side Metalization

Al – 20,000Å

Back Side Metalization

Au – 15,000Å

Scribe Alley Width

3.0 MILS

Wafer Diameter

4 INCHES

Gross Die Per Wafer

13,500

The CP560-MPSA92 is a silicon PNP transistor designed for high voltage applications.

MECHANICAL SPECIFICATIONS:

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

300

V

Collector-Emitter Voltage

VCEO

300

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

500

mA

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS: (TA=25°C)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=200V

250

nA

IEBO

VEB=3.0V

100

nA

BVCBO

IC=100µA

300

V

BVCEO

IC=1.0mA

300

V

BVEBO

IE=100µA

5.0

V

VCE(SAT)

IC=20mA, IB=2.0mA

0.5

V

VBE(SAT)

IC=20mA, IB=2.0mA

0.9

V

hFE

VCE=10V, IC=1.0mA

25

hFE

VCE=10V, IC=10mA

40

hFE

VCE=10V, IC=30mA

25

fT

VCE=20V, IC=10mA, f=100MHz

50

MHz

Cob

VCB=20V, IE=0, f=1.0MHz

6.0

pF

R0 (8-August 2019)

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