| 전자부품 데이터시트 검색엔진 |
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VS-T..RIA 데이터시트(PDF) 3 Page - Vishay Siliconix |
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VS-T..RIA 데이터시트(HTML) 3 Page - Vishay Siliconix |
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3 / 12 page ![]() VS-T..RIA Series www.vishay.com Vishay Semiconductors Revision: 27-Jul-2018 3 Document Number: 93756 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES T50RIA VALUES T70RIA VALUES T90RIA UNIT S Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 10 12 12 W Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz 2.5 3 3 Maximum peak gate current IGM TJ = TJ maximum, tp 5 ms 2.5 3 3 A Maximum peak negative gate voltage -VGT 10 10 10 V Maximum required DC gate voltage to trigger VGT TJ = -40 °C Anode supply = 6 V, resistive load; Ra = 1 4.0 4.0 4.0 V TJ = 25 °C 2.5 2.5 2.5 TJ = TJ maximum 1.5 1.5 1.5 Maximum required DC gate current to trigger IGT TJ = -40 °C 250 270 270 mA TJ = 25 °C 100 120 120 TJ = TJ maximum 506060 Maximum gate voltage that will not trigger VGD TJ = TJ maximum, rated VDRM applied 0.2 0.2 0.2 V Maximum gate current that will not trigger IGD 5.0 6.0 6.0 mA Maximum rate of rise of turned-on current dI/dt VD = 0.67 rated VDRM, ITM = 2 x rated dI/dt Ig = 400 mA for T50RIA and Ig = 500 mA for T70RIA/T90RIA; tr < 0.5 μs, tp 6 μs For repetitive value use 40 % non-repetitive per JEDEC® STD. RS397, 5.2.2.6 200 200 200 A/μs 180 180 180 160 160 160 150 150 150 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES T50RIA VALUES T70RIA VALUES T90RIA UNITS Maximum junction operating temperature range TJ -40 to +125 °C Maximum storage temperature range TStg -40 to +150 Maximum thermal resistance, junction to case per junction RthJC DC operation 0.65 0.50 0.38 K/W Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.2 Mounting torque, ± 10 % to heatsink Non-lubricated threads M3.5 mounting screws (1) 1.3 ± 10 % Nm terminals M5 screw terminals 3 ± 10 % Approximate weight 54 g Case style D-55 (T-module) R CONDUCTION PER JUNCTION DEVICES SINUSOIDAL CONDUCTION AT TJ MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM UNITS 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° T50RIA 0.08 0.10 0.13 0.19 0.31 0.06 0.10 0.14 0.20 0.32 K/W T70RIA 0.07 0.08 0.10 0.14 0.24 0.05 0.08 0.11 0.15 0.24 T90RIA 0.05 0.06 0.08 0.12 0.20 0.04 0.06 0.09 0.12 0.20 |
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