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TLP352F 데이터시트(PDF) 5 Page - Toshiba Semiconductor |
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TLP352F 데이터시트(HTML) 5 Page - Toshiba Semiconductor |
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5 / 21 page ![]() TLP352,TLP352F 5 9. 9. 9. 9. Recommended Operating Conditions (Note) Recommended Operating Conditions (Note) Recommended Operating Conditions (Note) Recommended Operating Conditions (Note) Characteristics Input on-state current Input off-state voltage Supply voltage Peak high-level output current Peak low-level output current Operating frequency Symbol IF(ON) VF(OFF) VCC IOPH IOPL f Note (Note 1) (Note 2) (Note 3) Min 6.5 0 15 Typ. Max 10 0.8 30 -2.0 +2.0 50 Unit mA V A kHz Note: The recommended operating conditions are given as a design guide necessary to obtain the intended performance of the device. Each parameter is an independent value. When creating a system design using this device, the electrical characteristics specified in this datasheet should also be considered. Note: A ceramic capacitor (0.1 µF) should be connected between pin 8 and pin 5 to stabilize the operation of a high- gain linear amplifier. Otherwise, this photocoupler may not switch properly. The bypass capacitor should be placed within 1 cm of each pin. Note: If the rising slope of the supply voltage(VCC) for the detector is steep,stable operation of the internal circuits cannot be guaranteed. Be sure to set 3.0 V/µs or less for a rising slope of the VCC. Note 1: The rise and fall times of the input on-current should be less than 0.5 µs. Note 2: Denotes the operating range, not the recommended operating condition. Note 3: Exponential waveform. IOPH ≥ -2.0 A (≤ 0.3 µs), IOPL ≤ 2.0 A (≤ 0.3 µs), Ta = 125 10. 10. 10. 10. Electrical Characteristics (Note) (Unless otherwise specified, T Electrical Characteristics (Note) (Unless otherwise specified, T Electrical Characteristics (Note) (Unless otherwise specified, T Electrical Characteristics (Note) (Unless otherwise specified, Taaaa = -40 to 125 = -40 to 125 = -40 to 125 = -40 to 125 )))) Characteristics Input forward voltage Input forward voltage temperature coefficient Input reverse current Input capacitance Peak high-level output current Peak low-level output current High-level output voltage Low-level output voltage High-level supply current Low-level supply current Threshold input current (L/H) Threshold input voltage (H/L) Supply voltage UVLO threshold voltage UVLO hysteresis Symbol VF ∆VF/∆Ta IR Ct IOPH IOPL VOH VOL ICCH ICCL IFLH VFHL VCC VUVLO+ VUVLO- UVLOHYS Note (Note 1) (Note 1) Test Circuit Fig. 13.1.1 Fig. 13.1.2 Fig. 13.1.3 Fig. 13.1.4 Fig. 13.1.5 Fig. 13.1.6 Test Condition IF = 10 mA, Ta = 25 IF = 10 mA VR = 5 V, Ta = 25 V = 0 V, f = 1 MHz, Ta = 25 IF = 5 mA, VCC = 30 V, V8-6 = -3.5 V IF = 5 mA, VCC = 15 V, V8-6 = -7.0 V IF = 0 mA, VCC = 30 V, V6-5 = 2.5 V IF = 0 mA, VCC = 15 V, V6-5 = 7.0 V IF = 5 mA, RL = 200 Ω, VCC1 = +15 V, VEE1 = -15 V VF = 0.8 V, RL = 200 Ω, VCC1 = +15 V, VEE1 = -15 V IF = 10 mA, VCC = 30 V, VO = Open IF = 0 mA, VCC = 30 V, VO = Open VCC = 15 V, VO > 1 V VCC = 15 V, VO < 1 V IF = 5 mA, VO > 2.5 V IF = 5 mA, VO < 2.5 V Min 1.4 1.0 2.0 11.0 0.8 15 11.0 9.5 Typ. 1.55 -2.0 95 -1.6 1.6 13.7 -14.9 1.5 1.5 1.0 12.5 11.0 1.5 Max 1.7 10 -1.0 -2.0 -12.5 3.0 3.0 5 30 13.5 12.0 Unit V mV/ µA pF A V mA V Note: All typical values are at Ta = 25 . Note: This device is designed for low power consumption, making it more sensitive to ESD than its predecessors. Extra care should be taken in the design of circuitry and pc board implementation to avoid ESD problems. Note 1: IO application time ≤ 50 µs, single pulse. 2016-09-27 Rev.7.0 ©2016 Toshiba Corporation |
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