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TPD2017FN 데이터시트(PDF) 5 Page - Toshiba Semiconductor

부품명 TPD2017FN
상세설명  Toshiba Intelligent Power Device Silicon Monolithic MOS Integrated Circuit
PDF  17 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPD2017FN 데이터시트(HTML) 5 Page - Toshiba Semiconductor

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TPD2017FN
2022-03-15
5
© 2022
Toshiba Electronic Devices & Storage Corporation
7. Operational Description
7.1.
Over temperature protection
To prevent destruction due to temperature rise, the outputs are turned off when the junction temperature of this
product exceeds the overheat detection temperature (TSD). When the junction temperature falls below the
hysteresis set temperature (TSD-ΔTSD), the unit recovers to normal operation.
7.2.
Over current protection
When the output current exceeds the overcurrent detection value (IOC) due to a load short-circuit, etc., the output
is turned off for the overcurrent protection operation time (tOFF-DUTY). The output will then recover, but if the
overcurrent condition persists, the output will be turned off again for the overcurrent protective operation period
(tOFF-DUTY).
7.3.
Timing chart
Figure 7.1 Timing chart



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