TS8510VB

www.vishay.com

Vishay Semiconductors

Rev. 1.0, 06-Feb-18

1

Document Number: 84402

For technical questions, contact: optochipsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Specification of High Power IR Emitting Diode Chip

DESCRIPTION

TS8510VB is a high power infrared, 855 nm surface emitting

diode in GaAlAs technology with high radiant power and

high speed. Polarity configuration is “n-up”.

FEATURES

• Package type: chip

• Package form: single chip

• Technology: surface emitter

• Dimensions chip (L x W x H in mm):



0.260 x 0.260 x 0.17

• Peak wavelength:

 = 855 nm

• Material categorization:



for

definitions

of

compliance

please

see

www.vishay.com/doc?99912











GENERAL INFORMATION

The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is

provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used

conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures

and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in

this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore

sold die may not perform on an equivalent basis to standard package products.

Note

• Test condition see table “Basic Characteristics”

Note

• MOQ: minimum order quantity

PRODUCT SUMMARY

COMPONENT



e (mW)

 (deg)



p (nm)

tr (ns)

TS8510VB

18

60

855

10

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

TS8510VB-SD-F

Wafer sawn on foil with disco

frame

MOQ: 385 000 pcs

Chip

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Forward current

IF

100

mA

Reverse voltage

VR

10

V

Surge forward current

tp/T = 0.1, tp = 100 μs

IFSM

500

mA

Junction temperature

Tj

100

°C

Operating temperature range

Tamb

-40 to +100

°C

Storage temperature range chip

Tstg1

-40 to +110

°C

Storage temperature range on foil

Tstg2

0 to +40

°C